2016/2/13
NIMS Develops New Spintronics Device, Tokyo University of Science
A research team at the National Institute for Materials Science (NIMS) and Tokyo University of Science has developed an element that can control spin with a lower current than conventional spintronics elements.It is expected as a technology that leads to low power consumption and high density of storage media.
The group has developed an element that can control spin by stacking three solid substances, iron oxide, lithium silicate, and lithium cobalt oxide.By applying a voltage, lithium ions in lithium silicate can be moved inside iron oxide.This makes it possible to control the spin of electrons in iron oxide.Compared to conventional devices, it has the advantage of being able to control spin with low power consumption.Furthermore, since it is composed only of solids, there is no need to worry about liquid leakage.In addition, because of its simple structure, it is easy to achieve high integration by applying existing semiconductor substrate processing technology.
It will take some time before it becomes a product such as computer memory, but it will be a big step forward.In the future, based on this result, it is planned to proceed to demonstration experiments for practical use such as technological development of high integration.